page . 1 rev.0.1-nov.20.2008 MMDT3946 complementary npn / pnp general purpose switching transistor voltage 40 volts 200 mwatts features ? epitaxial silicon, planar design collector-emitter voltage vce = 40v collector current ic = 200ma in compliance with eu rohs 2002/95/ec directives . transition frequency > 300mhz ft@ic=10ma,vce=20v, mechanical data case: sot-363, plastic terminals: solderable per mil-std-750, method 2026 approx. weight: 0.006 gram marking: s3a power absolute ratings g n i t a r e t u l o s b an o i t c e s 4 0 9 3 n p nn o i t c e s 6 0 9 3 pn p- r e t e m a r a pl o b m y se u l a ve u l a vs t i n u e g a t l o v r e t t i m e - r o t c e l l o cv ceo 0 40 4 -v e g a t l o v e s a b - r o t c e l l o cv cbo 0 60 4 -v e g a t l o v e s a b - r e t t i m ev ebo 0 . 60 . 5 -v s u o u n i t n o c - t n e r r u c r o t c e l l o ci c 0 0 20 0 2 -a m thermal characteristics r e t e m a r a pl o b m y se u l a vs t i n u ) 1 e t o n ( n o i t a p i s s i d r e w o p x a m p t o t 0 0 2w m t n e i b m a o t n o i t c n u j , e c n a t s i s e r l a m r e h t r a j 5 2 6 o w / c e r u t a r e p m e t n o i t c n u j t j 0 5 1 o t 5 5 - o c e r u t a r e p m e t e g a r o t s t g t s 0 5 1 o t 5 5 - o c note 1: transistor mounted on fr-5 board 1.0 x 0.75 x 0.062 in. 1 2 3 6 5 4 fig.55 f=100mhz
page . 2 rev.0.1-nov.20.2008 MMDT3946 r e t e m a r a pl o b m y sn o i t i d n o c t s e t. n i m. p y t. x a ms t i n u e g a t l o v n w o d k a e r b r e t t i m e - r o t c e l l o cv ) r b (o e c i c i , a m 0 . 1 = b 0 =0 4--v e g a t l o v n w o d k a e r b e s a b - r o t c e l l o cv ) r b (o b c i c i , a u 0 1 = e 0 =0 6--v e g a t l o v n w o d k a e r b e s a b - r e t t i m ev ) r b (o b e i e i , a u 0 1 = c 0 =0 . 6--v t n e r r u c f f o t u c e s a bi l b v e c v , v 0 3 = b e v 0 . 3 =--0 5a n t n e r r u c f f o t u c r o t c e l l o ci x e c v e c v , v 0 3 = b e v 0 . 3 =--0 5a n ) 2 e t o n ( n i a g t n e r r u c c dh e f i c v , a m 1 . 0 = e c v 0 . 1 = i c v , a m 0 . 1 = e c v 0 . 1 = i c v , a m 0 1 = e c v 0 . 1 = i c v , a m 0 5 = e c v 0 . 1 = i c v , a m 0 0 1 = e c v 0 . 1 = 0 4 0 7 0 0 1 0 6 0 3 - - - - - - - 0 0 3 - - - e g a t l o v n o i t a r u t a s r e t t i m e - r o t c e l l o c ) 2 e t o n ( v ) t a s ( e c i c i , a m 0 1 = b a m 0 . 1 = i c i , a m 0 5 = b a m 0 . 5 = -- 2 . 0 3 . 0 v e g a t l o v n o i t a r u t a s r e t t i m e - e s a b ) 2 e t o n ( v ) t a s ( e b i c i , a m 0 1 = b a m 0 . 1 = i c i , a m 0 5 = b a m 0 . 5 = 5 6 . 0 - - - 5 8 . 0 5 9 . 0 v e c n a t i c a p a c e s a b - r o t c e l l o cc o b c v b c i , v 5 = e z h m 1 = f , 0 =--0 . 4f p e c n a t i c a p a c e s a b - r e t t i m ec o b e v b c i , v 5 . 0 = c z h m 1 = f , 0 =--0 . 8f p e m i t y a l e dd t v c c v , v 3 = e b , v 5 . 0 - = i c i , a m 0 1 = b a m 0 . 1 = --5 3s n e m i t e s i rr t v c c v , v 3 = e b , v 5 . 0 - = i c i , a m 0 1 = b a m 0 . 1 = --5 3s n e m i t e g a r o t ss t v c c i , v 3 = c a m 0 1 = i b i = 1 b a m 0 . 1 = 2 --0 0 2s n e m i t l l a ff t v c c i , v 3 = c a m 0 1 = i b i = 1 b a m 0 . 1 = 2 --0 5s n electrical characteristics npn section note 2: pulse test: pulse width < 300 us, duty cycle < 2.0%. 275 10k 0 -0.5v 300ns duty cycle ~ 2.0% +10.9v +3v delay and rise time equivalent test circuit <1ns c*<4pf s storage and fall time equivalent test circuit 0 -9.1v 10 to 500us duty cycle ~ 2.0% +10.9v < 1ns 0 1n916 +3v 275 10k c*<4pf s switching time equivalent test circuits
page . 3 MMDT3946 electrical characteristics pnp section r e t e m a r a pl o b m y sn o i t i d n o c t s e t. n i m. p y t. x a ms t i n u e g a t l o v n w o d k a e r b r e t t i m e - r o t c e l l o cv ) r b (o e c i c i , a m 0 . 1 - = b 0 =0 4 ---v e g a t l o v n w o d k a e r b e s a b - r o t c e l l o cv ) r b (o b c i c i , a u 0 1 - = e 0 =0 4 ---v e g a t l o v n w o d k a e r b e s a b - r e t t i m ev ) r b (o b e i e i , a u 0 1 - = c 0 =0 . 5 ---v t n e r r u c f f o t u c e s a bi l b v e c v , v 0 3 - = b e v 0 . 3 - =--0 5 -a n t n e r r u c f f o t u c r o t c e l l o ci x e c v e c v , v 0 3 - = b e v 0 . 3 - =--0 5 -a n ) 2 e t o n ( n i a g t n e r r u c c dh e f i c v , a m 1 . 0 - = e c v 0 . 1 - = i c v , a m 0 . 1 - = e c v 0 . 1 - = i c v , a m 0 1 - = e c v 0 . 1 - = i c v , a m 0 5 - = e c v 0 . 1 - = i c v , a m 0 0 1 - = e c v 0 . 1 - = 0 6 0 8 0 0 1 0 6 0 3 - - - - - - - 0 0 3 - - - e g a t l o v n o i t a r u t a s r e t t i m e - r o t c e l l o c ) 2 e t o n ( v ) t a s ( e c i c i , a m 0 1 - = b a m 0 . 1 - = i c i , a m 0 5 - = b a m 0 . 5 - = -- 5 2 . 0 - 4 . 0 - v e g a t l o v n o i t a r u t a s r e t t i m e - e s a b ) 2 e t o n ( v ) t a s ( e b i c i , a m 0 1 - = b a m 0 . 1 - = i c i , a m 0 5 - = b a m 0 . 5 - = 5 6 . 0 - - - - 5 8 . 0 - 5 9 . 0 - v e c n a t i c a p a c e s a b - r o t c e l l o cc o b c v b c i , v 5 - = e z h m 1 = f , 0 =--0 . 4f p e c n a t i c a p a c e s a b - r e t t i m ec o b e v b c i , v 5 . 0 - = c z h m 1 = f , 0 =--0 1f p e m i t y a l e dd t v c c v , v 3 - = e b , v 5 . 0 - = i c i , a m 0 1 - = b a m 0 . 1 - = --5 3s n e m i t e s i rr t v c c v , v 3 - = e b , v 5 . 0 - = i c i , a m 0 1 - = b a m 0 . 1 - = --5 3s n e m i t e g a r o t ss t v c c i , v 3 - = c a m 0 1 - = i b i = 1 b a m 0 . 1 - = 2 --5 2 2s n e m i t l l a ff t v c c i , v 3 - = c a m 0 1 - = i b i = 1 b a m 0 . 1 = 2 --5 7s n 275 10k 0 -0.5v 300ns -10.9v +3v delay and rise time equivalent test circuit <1ns c *<4pf s storage and fall time equivalent test circuit 0 +9 .1 v 10 to 500us duty cycle ~ 2.0% -10.9v < 1ns 0 1n916 +3v 275 10k c *<4pf s switching time equivalent test circuits rev.0.1-nov.20.2008
page . 4 MMDT3946 electrical characteristics curve npn section fig. 3. typical v vs. collector current ce (sat) fig. 1. typical h vs. collector current fe fig. 5. typical capacitances vs. reverse voltage fig. 2. typical vbe vs. collector current collector current, i (ma) c collector current, i (ma) c collector current, i (ma) c 1.000 0.100 0.010 0.01 0.1 0.1 1 1 1 10 10 10 100 100 1000 0.01 0.1 1.0 10 100 1.400 1.200 1.000 0.800 0.600 0.400 0.200 0.000 1.0 0.1 v (sat)(mv) ce v(v) be (sat) v(v) be reverse voltage, v (v) r capacitance (pf) c(cb) ob c (eb) ib t =100 c j o t=25c j o t =150 c j o t =150 c j o i/ c i=10 b t=25c j o t =150 c j o i/ c i=10 b h fe collector current, i (ma) c 300 250 200 150 100 50 0 0.01 0.01 0.1 0.1 1 1 10 10 100 100 1000 1000 h fe t =100 c j o t =100 c j o t=25c j o t=25c j o t =150 c j o t =150 c j o v=1v ce v=1v ce fig. 4. typical v vs collector current be(sat) rev.0.1-nov.20.2008
page . 5 MMDT3946 electrical characteristics curve pnp section collector current, -i (ma) c collector current, -i (ma) c reverse voltage, v (v) r collector current, -i (ma) c collector current, -i (ma) c fig. 1. typical h vs collector current fe fig. 3. typical v vs collector current ce (sat) fig. 2. typical v vs collector current be fig. 4. typical v vs collector current be (sat) h fe -v (v) ce (sat) capacitance (pf) -v (v) be (sat) -v (v) be fig. 5. typical capacitances vs reverse voltage 0.01 0.01 300 1.2 1.0 0.8 0.6 0.4 0.2 0.0 250 200 150 100 50 0 0.1 0.1 1 1 10 10 100 100 1000 1000 0.01 0.01 0.01 0.100 0.10 1.00 1.000 0.1 -0.1 0.1 1 -1 1 1 10 -10 10 10 100 -100 100 1000 c(cb) ob c (eb) ib t =100 c j o t =100 c j o t =100 c j o t=25c j o t=25c j o t=25c j o t=25c j o v=1v ce v=1v ce t =150 c j o t =150 c j o t =150 c j o t =150 c j o i/ c i=10 b i/ c i=10 b rev.0.1-nov.20.2008
page . 6 mounting pad layout ? packing information t/r - 10k per 13" plastic reel t/r - 3k per 7? plastic reel order information legal statement copyright panjit international, inc 2008 the information presented in this document is believed to be accurate and reliable. the specifications and information herein are subject to change without notice. pan jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. pan jit products are not authorized for use in life support devices or systems. pan jit does not convey any license under its patent rights or rights of others. MMDT3946 rev.0.1-nov.20.2008
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